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ARF466FL
D G
ARF466FL
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
S
200V
300W
45MHz
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of operation.
* Specified 150 Volt, 40.68 MHz Characteristics: * Output Power = 300 Watts. * Gain = 16dB (Class AB) * Efficiency = 75% (Class C)
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case
* Low Cost Flangeless RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness.
All Ratings: TC = 25C unless otherwise specified.
ARF466FL UNIT Volts Amps Volts Watts C/W C
1000 1000 13 30 450 0.30 -55 to 175 300
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(ON) IDSS IGSS g fs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) Drain-Source On-State Resistance
1
MIN
TYP
MAX
UNIT Volts
1000 0.90 25 250 100 3.3 2 7 9 4
(VGS = 10V, ID = 6.5A)
ohms A nA mhos Volts
2-2006 050-4928 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 500 V ID = 13A @ 25C RG = 1.6 MIN TYP MAX
ARF466FL
UNIT
2000 165 75 12 10 43 10
ns pF
FUNCTIONAL CHARACTERISTICS
Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 2.5V VDD = 150V Pout = 300W MIN TYP MAX UNIT dB %
14 70
16 75
No Degradation in Output Power
1 Pulse Test: Pulse width < 380S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30 25 20
GAIN (dB)
10,000 Class C VDD = 150V
Pout = 150W
CAPACITANCE (pf)
Ciss
1000 500
15 10 5 0 30
Coss
100 50
Crss
60 75 90 105 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency
45
120
10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
20 18
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
52
OPERATION HERE LIMITED BY RDS (ON)
16 14 12 10 8 6 4 2 0
100uS 10 5 1mS 1 .5
TC =+25C TJ =+175C SINGLE PULSE
TJ = -55C
2-2006
10mS 100mS
TJ = -55C
050-4928 Rev A
TJ = +25C
TJ = +125C
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics
.1
1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area
TYPICAL PERFORMANCE CURVES
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50
ID, DRAIN CURRENT (AMPERES)
25 VGS=15 & 10V 20 8V 15 6V 5.5V 5V 5 4.5V 4V
ARF466FL
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
10
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature
-25
0
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics
0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.25
D = 0.9
0.7 0.20 0.15 0.10 0.05 0 0.5 0.3 SINGLE PULSE Note:
PDM t1 t2
JC
0.1 0.05 10-5 10-4
Duty Factor D = t1/t 2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Junction temp. (C)
RC MODEL
0.108
0.00872
Power (watts)
0.146
0.0650
0.0460 Case temperature. (C)
0.767
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27.1 40.7 65 ZIN () 18 - j 11 1.3 - j 5 .40 - j 2.6 .20 - j 1.6 .11 + j 0.6 ZOL () 30 - j 1.7 25.7 - j 9.8 18 - j 13.3 12 - j 12.6 6.2 - j 8.9
Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 300 W output at Vdd = 150V
050-4928 Rev A
2-2006
ARF466FL
40.68 MHz Test Circuit
L4 Bias + 0-12V RF Input R1 C7 C6 L1 TL1 C3 C1 R3 R2 R4 L3 C9 C2 L2 ARF466FL C4 C5 C8
+ 150V RF Output
R5
C1 -- 2200pF ATC 700B C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1mF 500V ceramic chip C9 -- 3x 2200pF 500V chips COG
L1 -- 3t #22 AWG .25"ID .25 "L ~55nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5uH L4 -- VK200-4B ferrite choke 3uH
R1- R3 -- 1k 0.5W R4- R5 -- 1 1W SMT TL1 -- 40 t-line 0.15 x 2" C1 is ~1.75" from R4-5.
T3 Package Outline
.375
.125R 4 pls
S
D
S
.125dia 4 pls
Thermal Considerations and Package Mounting:
The rated power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resistance between junctions and case mounting surface is 0.3C/W. When installed, an additional thermal impedance of 0.1C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. Torque the mounting screws to 6 in-lb (0.68 N-m).
ARF466FL
.320
.570
1.250
S G S
1.500
.300
.005 .040 .200
.100
.210
.330
.100
.210
050-4928 Rev A
2-2006
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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